STP601 / STP601d p channel enhancement mode mosfet 30a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP601 / STP601d 2 010 . v1 description STP601/STP601d is the pchannel logic enhancement m ode power field effect transistor which is produced using high cell densit y, dmos trench technology. the stp401 has been designed specially to improve the o verall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. pin configuration (d-pak) to-252 to-251 part marking y: year code a: week code q: process code feature 60v/20.0a, r ds(on) = 20m(typ.) @v gs = 10v 60v/20.0a, r ds(on) = 27m @v gs = 4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability to252,to251 package design ( STP601d ) ( s tp610 )
STP601 / STP601d p channel enhancement mode mosfet 30a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP601 / STP601d 2 010 . v1 absoulte maximum ratings (ta = 25 unless otherwise noted) parameter symbo l typical unit drainsource voltage vdss 60 v gatesource voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=100 id 30.0 22.0 a pulsed drain current idm 110 a continuous source current (diode conduction) is 30 a power dissipation ta=25 pd 60 w operation junction temperature tj 150 storage temperature range tstg 55/150 thermal resistancejunction to ambient rja 25 /w
STP601 / STP601d p channel enhancement mode mosfet 30a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP601 / STP601d 2 010 . v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain source breakdown voltage v (br)dss v gs =0v,id=250ua 6 0 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =48v,v gs =0v 1 ua v ds =48v,v gs =0v t j =55 5 on st ate drain current i d(on) v ds R 10v,v ds =5v 30 a drainsource on resistance r ds(on) v gs =10v,i d =20a v gs =4.5v,i d =20a 20 27 30 40 m forward transconductance gfs v ds =50v,i d =7.8a 33 s diode forward voltage v sd i s =7.8a,v gs =0v 1.2 v dynamic total gate charge q g v ds =30v,v gs =10v i d =20a 58 nc gatesource charge q gs 23 gatedrain charge q gd 10 input capacitance c iss v ds =30v,v gs =0v f=1mhz 3600 pf output capacitance c oss 240 reverse transfercapacitance c rss 153 turnon time t d(on) tr v gs =10v,v ds =30v r d =3,r g =1.5 12 ns 15 turnoff time t d(off) tf 38 15
STP601 / STP601d p channel enhancement mode mosfet 30a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP601 / STP601d 2 010 . v1 typical characterictics
STP601 / STP601d p channel enhancement mode mosfet 30a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP601 / STP601d 2 010 . v1 typical characterictics
STP601 / STP601d p channel enhancement mode mosfet 30a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP601 / STP601d 2 010 . v1 to-252-2l package outline sop-8p
STP601 / STP601d p channel enhancement mode mosfet 30a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP601 / STP601d 2 010 . v1 to-251 package outline sop-8p
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